高功率微波等离子体环境下甲烷浓度对金刚石膜的影响

doi:10.11949/j.issn.0438-1157.20181169

化工学报 ›› 2018, Vol. 69 ›› Issue (S2): 505-511.DOI: 10.11949/j.issn.0438-1157.20181169

• 材料化学工程与纳米技术 • 上一篇下一篇

高功率微波等离子体环境下甲烷浓度对金刚石膜的影响

罗凯, 汪建华, 余军火, 翁俊

武汉工程大学湖北省等离子体化学与新材料重点实验室, 湖北武汉 430073

收稿日期:2018-10-09 修回日期:2018-11-14 出版日期:2018-12-31 发布日期:2018-12-31
通讯作者: 汪建华
基金资助:
国家自然科学基金项目（51402220）；湖北省教育厅基金项目（Q20151517）；武汉工程大学科学研究基金项目（K201506）。

Effect of methane concentration on diamond film in high power microwave plasma system

LUO Kai, WANG Jianhua, YU Junhuo, WENG Jun

Key Laboratory of Plasma Chemistry and Advanced Materials of Hubei Province, Wuhan Institute of Technology, Wuhan 430073, Hubei, China

Received:2018-10-09 Revised:2018-11-14 Online:2018-12-31 Published:2018-12-31
Supported by:
supported by the National Natural Science Foundation of China (51402220), the Project of Hubei Provincial Department of Education (Q20151517) and the Research Fund of Wuhan Institute of Technology (K201506).

摘要/Abstract

摘要：

在实验室自制的10 kW微波等离子体化学气相沉积装置中，分析了高功率微波等离子体环境中甲烷浓度对金刚石膜生长的影响。利用等离子体发射光谱诊断分析高功率微波等离子体放电环境的特征，同时利用SEM及Raman光谱对不同沉积条件下获得的金刚石膜的形貌及质量进行表征，以确定高功率微波等离子体环境下金刚石膜生长的最优甲烷浓度范围。实验表明在保持微波功率为5000 W，CH₄/H₂≤1%时，金刚石膜中二次形核现象明显，晶粒尺寸较小；CH₄/H₂≥2.5%时，金刚石膜可获得较大的晶粒，但易于产生孪晶体；CH₄/H₂=1.5%～2%时，可获得晶粒完整且质量较高的金刚石膜。

Abstract:

In a laboratory-made 10 kW microwave plasma chemical vapor deposition (MPCVD) apparatus, the influence of methane concentration on the growth of diamond film under a high-power microwave plasma was analyzed. The characteristics of high-power microwave plasma discharge environment were diagnosed by plasma emission spectroscopy. At the same time, the morphology and quality of diamond films obtained under different deposition conditions were characterized by SEM and Raman spectroscopy to determine diamonds in a highpower microwave plasma environment. The optimal methane concentration range for membrane growth was abtained. Experiments show that when microwave power is kept at 5000 W, when the CH₄/H₂ is less than 1%, the secondary nucleation phenomenon in the diamond film is obvious, and the grain size is small; when the CH₄/H₂ is more than 2.5%, the diamond film can get larger crystal grains, but easy to produce germanium crystals; when CH₄/H₂=1.5%-2%, diamond films with complete crystal grains and high quality can be obtained.

中图分类号:

TQ164

罗凯, 汪建华, 余军火, 翁俊. 高功率微波等离子体环境下甲烷浓度对金刚石膜的影响[J]. 化工学报, 2018, 69(S2): 505-511.

LUO Kai, WANG Jianhua, YU Junhuo, WENG Jun. Effect of methane concentration on diamond film in high power microwave plasma system[J]. CIESC Journal, 2018, 69(S2): 505-511.

参考文献

[1] 熊礼威, 彭环洋, 汪建华, 等.H₂/Ar流量比对纳米金刚石形貌和结构的影响[J].Surface Technology, 2017, 46(1):53-58.XIONG L W,PENG H Y,WANG J H,et al.Effects of H₂/Ar flow rate on morphology and structure of nanocrystalline diamond[J].Surface Technology, 2017, 46(1):53-58.
[2] 熊礼威, 彭环洋, 汪建华, 等.PECVD法制备掺硼纳米金刚石薄膜的工艺研究进展[J].Surface Technology, 2016, 45(10):40-48.XIONG L W,PENG H Y,WANG J H,et al.Research progress in preparation of boron doped nanocrystalline diamond films by PECVD method[J].Surface Technology, 2016, 45(10):40-48.
[3] ZUO Y G, LI J J, BAI Y, et al.Growth of nanocrystalline diamond by dual radio frequency inductively coupled plasma jet CVD[J].Diamond & Related Materials, 2017, 73:67-71.
[4] TANG C J, FERNANDES A J S, GRANADA M, et al.High rate growth of nanocrystalline diamond films using high microwave power and pure nitrogen/methane/hydrogen plasma[J].Vacuum, 2015, 122(3):342-346.
[5] REMES Z, BABCHENKO O, VARGA M, et al. Preparation and optical properties of nanocrystalline diamond coatings for infrared planar waveguides[J].Thin Solid Films, 2016, 618:130-133.
[6] BUTLER J E, MANKELEVICH Y A, CHEESMAN A, et al.Understanding the chemical vapor deposition of diamond:recent progress[J].Journal of Physics Condensed Matter, 2009, 21(36):364201.
[7] KING D, YARAN M K, SCHUELKE T, et al.Scaling the microwave plasma-assisted chemical vapor diamond deposition process to 150-200 mm substrates[J].Diamond & Related Materials, 2008, 17(4/5):520-524.
[8] FUNER M, WILD C, KOIDL P.Novel microwave plasma reactor for diamond synthesis[J].Applied Physics Letters, 1998, 72(10):1149-1151.
[9] ANDO Y, TACHIBANA T, KOBASHI K.Growth of diamond films by a 5-kW microwave plasma CVD reactor[J].Diamond & Related Materials, 2001, 10(3):312-315.
[10] TACHIBANA T, ANDO Y, WATANABE A, et al.Diamond films grown by a 60-kW microwave plasma chemical vapor deposition system[J].Diamond & Related Materials, 2001, 10(9):1569-1572.
[11] WENG J, XIONG L W, WANG J H, et al.Investigation of depositing large area uniform diamond films in multi-mode MPCVD chamber[J].Diamond & Related Materials, 2012, 30:15-19.
[12] SUN Q, WANG J H.Study on the large area diamond film deposition in a self-built overmoded microwave power chemical vapor deposition device[J].Chemical Engineering Transactions, 2017, 62:1129-1134.
[13] 孙祁,汪建华,刘繁, 等.氢气流量对大面积金刚石膜沉积的影响[J].中国表面工程, 2018, 31(2):76-84.SUN Q,WANG J H, LIU F, et al.Effects of hydrogen flow rate on deposition of large area diamond films[J].China Surface Engineering, 2018, 31(2):75-84.
[14] WANG C, YANG G.Thermodynamics of metastable phase nucleation at the nanoscale[J].Material Science and Engineering:R:Reports, 2005, 49(6):157-202.
[15] LIAO W H,LIN C R,WEI D H.Effect of CH₄ concentration on the growth behavior, structure and transparent properties of ultra-nanocrystalline diamond films synthesized by focused microwave ArCH₄H₂ plasma jets[J].Applied Surface Science, 2013, 270(4):324-330.
[16] 孙祁,汪建华,翁俊,等.MPCVD快速制备(100)面金刚石薄膜[J].硬质合金, 2013, 20(1):8-13.SUN Q, WANG J H,WENG J, et al.High growth rate preparation of (100)-faceted diamond films by microwave plasma CVD[J].Cemented Carbide, 2013, 20(1):8-13.

高功率微波等离子体环境下甲烷浓度对金刚石膜的影响

Effect of methane concentration on diamond film in high power microwave plasma system

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