CIESC Journal

• 化工学报 • 上一篇    下一篇

低压化学蒸气淀积(LPCVD)反应器的模拟和分析

朱开宏,陈良恒,袁渭康   

  1. 华东化工学院,华东化工学院,华东化工学院 上海 ,上海 ,上海
  • 出版日期:1989-10-25 发布日期:1989-10-25

Modeling and Analysis of LPCVD Reactors

Zhu Kaihong, Chen Lianhen and Yuan Weikang(East China Institute of Chemical Technology, Shanghai)   

  • Online:1989-10-25 Published:1989-10-25

摘要: 本文利用低压化学蒸气淀积(LPCVD)反应器中衬底间隙内的扩散-反应过程和环形通道内的质量、热量传递过程的数学模型对片内和片间均匀性问题进行了分析。结果表明:片内均匀性h和片内效率因子n均可用体积变化准数和扩散准数的函数表示。合理设置管外加热装置,可改善片间均匀性或提高反应气流的转化率。这些结果可用于指导低压化学蒸气淀积反应器的设计和操作参数的选择 ,

Abstract: In this paper the uniformity within and among the wafers in LPCVD reactors is analyzed by means of mathematical models, which describe the diffusion-reaction process between two adjacent wafers and mass, heat transport in the annular flow region. Results indicate that the uniformity h and effectiveness factorη within each wafer can be represented as function of volume change modulus ε and diffusion modulus φ; approprately installing heating device out of reactor tube can improve the uniformity from wafer to wafer or increase the conversion of reactant, These conclusions can serve as guidance tor design of LPCVD reactors and selection of operation parameters.