氢氧化四甲基铵腐蚀硅性能的改善

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氢氧化四甲基铵腐蚀硅性能的改善

杨笛; 余金中; 陈少武; 攀中朝; 李运涛

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:1900-01-01 修回日期:1900-01-01 出版日期:2005-02-28 发布日期:2005-02-28
通讯作者: 杨笛

An Improvement on Si-etching Tetramethyl Ammonium Hydroxide Solution

YANG Di; YU Jinzhong; CHEN Shaowu; FAN Zhongchao; LI Yuntao

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:1900-01-01 Revised:1900-01-01 Online:2005-02-28 Published:2005-02-28
Contact: YANG Di

摘要/Abstract

摘要： An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm.min^-1 and 0.5 nm.min^-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.

关键词: 硅氧化物;四甲基铵羟化物;蚀刻技术;光学设备;加工技术

Abstract: An optimal concentration of the etching solution for deep etching of silicon, including 3% tetramethyl ammonium hydroxide and 0.3% (NH4)2S208, was achieved in this paper. For this etching solution, the etching rates of silicon and silicon dioxide were about 1.1μm.min^-1 and 0.5 nm.min^-1, respectively. The etching ratio between (100) and (111) planes was about 34:1, and the etched surface was very smooth.

Key words: silicon, silicon dioxide, tetramethyl ammonium hydroxide, etching rate

杨笛,余金中,陈少武,攀中朝,李运涛. 氢氧化四甲基铵腐蚀硅性能的改善[J]. CIESC Journal.

YANG Di, YU Jinzhong, CHEN Shaowu, FAN Zhongchao, LI Yuntao. An Improvement on Si-etching Tetramethyl Ammonium Hydroxide Solution[J]. .

氢氧化四甲基铵腐蚀硅性能的改善

An Improvement on Si-etching Tetramethyl Ammonium Hydroxide Solution

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