CIESC Journal

• 材料化学工程与纳米技术 • 上一篇    下一篇

氧化亚铜纳米线的制备及其光电性能

张卫国;刘伟星;李贺;姚素薇   

  1. 天津大学化工学院杉山表面技术实验室,天津 300072

  • 出版日期:2007-12-05 发布日期:2007-12-05

Preparation and photoelectricity of Cu2O nanowires

ZHANG Weiguo;LIU Weixing;LI He;YAO Suwei   

  • Online:2007-12-05 Published:2007-12-05

摘要: 摘要:通过电沉积法在阳极氧化铝模板中制备了Cu2O纳米线,利用X射线衍射(XRD)、扫描电子显微镜(SEM)对Cu2O纳米线的组成和形貌进行了表征,并测试了Cu2O/AAO阵列体系的光电压、交流阻抗性能。测试结果表明,制备的Cu2O纳米线的直径约120nm,长约2μm;Cu2O/AAO阵列体系在紫外灯(365nm)照射下,光电压约25mV, 阻抗值大大减小。

Abstract:

Cu2O nanowires were successfully synthesized by an electrochemical method using alumina membrane as template. The composition and morphology of nanowires were characterized by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The photo-potential and electrochemical impedance spectroscopy experiments of Cu2O/AAO were also performed. The results showed that the diameter of the Cu2O nanowires was about 120 nm and their length was 2 μm. The photo-potential was about 25 mV and the electrochemical impedance of Cu2O/AAO was much smaller under the light of 365 nm.