CIESC Journal

• 表面与界面工程 • 上一篇    下一篇

聚天冬氨酸对铜缓蚀作用的光电化学研究

朱律均;徐群杰;曹为民;万宗跃;印仁和;周国定;林昌健   

  1. 上海电力学院环境工程系,国家电力公司热力设备腐蚀与防护部级重点实验室;上海大学理学院化学系;厦门大学固体表面物理化学国家重点实验室
  • 出版日期:2008-03-05 发布日期:2008-03-05

Photoelectrochemical study of inhibition mechanism of PASP on copper

ZHU Lüjun;XU Qunjie;CAO Weimin;WAN Zongyue;YIN Renhe;ZHOU Guoding;LIN Changjian

  

  • Online:2008-03-05 Published:2008-03-05

摘要:

用光电化学方法研究了绿色水处理药剂聚天冬氨酸对铜的缓蚀作用,铜在硼酸-硼砂缓冲溶液(pH=9.2)中,表面的Cu2O膜显p-型光响应,添加适量缓蚀剂聚天冬氨酸(PASP)后,PASP吸附在铜电极表面成膜促使Cu2O膜增厚,体现在电位在负向扫描过程中Cu2O膜的p-型光电流增大。 p-型光电流越大,缓蚀性能越好。当PASP浓度为3 mg·L-1时,Cu2O膜的p-型光电流最大,缓蚀性能最好。 Cl-的存在会阻止PASP在铜电极表面的吸附,使Cu2O膜暴露而受侵蚀,导致了PASP的缓蚀性能变差。

Abstract:

The inhibition mechanism of polyaspartic(PASP)on copper electrode in a borax buffer solution was studied by the photocurrent response method. The copper electrode in a borax buffer solution showed p-type photocurrent response which came from Cu2O layer on its surface. The photocurrent response during cathodic polarization became bigger when inhibitor PASP which could be adsorbed on the Cu electrode and make Cu2O layer thicker was added. The bigger the photocurrent response,the better the inhibition effect. When adding PASP with a concentration of 3 mg·L-1,the photocurrent response was the biggest and inhibition of copper corrosion was the best. Cl- could prevent PASP from being absorbed and make Cu2O layer unprotected,resulting in worse inhibition.