摘要：

采用脉冲电沉积技术在氧化铝模板中制备得到直径60 nm的InSb/Sb超晶格纳米线阵列，并运用扫描电镜、透射电镜和电子能谱仪对其形貌与结构进行了表征与测试。高度有序的InSb/Sb超晶格纳米线长度约为40 μm，其长径比超过600。实验中，通过改变沉积电压与时间达到了对超晶格纳米线组分与结构的控制, 纳米线阵列中In与Sb的原子质量比接近于1/2，在每个周期中，InSb的厚度为12 nm，Sb

Abstract:

InSb/Sb superlattice nanowires array with diameter of 60 nm, embedded in anodic alumina membrane (AAM)template were fabricated by pulsed electrodeposition. Morphology and structure characterization of the superlattice nanowires were performed by using scanning electron microscopy (SEM), transmission electron microscopy (SEM)and energy dispersive X-ray spectrometer (EDS).The length of the highly ordered InSb/Sb superlattice nanowires was about 40 μm, and its aspect ratio was more than 600. In this experiment, the components and structure of the InSb/Sb superlattice nanowires were controlled by changing deposition voltage and time.The atomic ratio of In to Sb in the superlattice nanowires was about 1/2, and the thickness of InSb and Sb were 12 nm and 20 nm respectively in each period.The study of the nanowires growth showed that the fabrication parameters, such as temperature and voltage, had a strong influence on the growth of the InSb/Sb superlattice nanowires.And the deposition rate of Sb was higher than that of InSb in the deposition process.