DEVELOPMENT OF NEW HEAT RESISTING PHENOL-STARCH MOULDING MATERIAL(PF2C4)
• 材料科学与工程 • Previous Articles
CHEN Guomin;CHEN Zhaohui
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新型耐热级苯酚-淀粉模塑料 (PF2C4)的研制
陈国民;陈朝辉
湖南城市学院科技处,湖南 益阳 413000;国防科技大学新型陶瓷纤维及其复合材料重点实验室,湖南长沙410073
Abstract: A new heat resisting phenol-starch moulding material (PF2C4) was prepared.Its typical raw materials formulation, preparative technology and moulding technology were determined.The method of its quatity control was put forward and its properties and economic advantage were analyzed. The results show that typical raw materials formulation(mass percent)of the product is phenol-starch is phenol-starch resin∶hexamethylene-tetramine∶wood flour∶calcium carbonate∶magnesium oxide∶zinc stearate∶stearic acid∶Oil Aniline Black∶ultramarine=37.0∶6.4∶30.0∶24.0∶0.6∶0.6∶0.4∶0.5∶0.5.The preparative technological parameters of the product were mixed time ≥60min, temperature of the working roller 90—100℃, temperature of the idle roller 145—155℃, distance of the two rollers 2.0—2.5mm, warm-up time 4—5min.combining batch time≥45min.The moulding, technological parameters of the product were preheating temperature 100—110℃, preheating time 10—15min, moulding pressure≥25MPa, moulding temperature 180—185℃, moulding time 0.8—1.0min8226;mm-1, exhaust ≥3 times. The quality of the product was controlled by bright outward appearance of sheet material of moulding material and Raschig flow property 80—120mm of moulding material.The properties of the product came up to the national standard of raw heat resisting phenol-for maldehyde material (PF2C4), specifically its heat properties (thermal deformation temperature 174℃) and electric properties (insulating resistance 6.0×1012Ω, dielectric strength 6.7MV8226;m-1, dielectric loss tangent 0.03)surpassed greatly the national standard.It showed very good electric properties in moist environment.By comparison with raw heat resisting thermoplastic phenol-formaldehyde moulding material(PF2C4),the cost of raw materials consumption reduced by is 20.9%.
CHEN Guomin;CHEN Zhaohui.
陈国民;陈朝辉.
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https://hgxb.cip.com.cn/EN/Y2004/V55/I2/341