CIESC Journal
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张尔慈
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CHANG EKH-TZE (Shenyang Institute of Ghemical Industry., Ministry of Ghemical Industry)
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摘要： 本文提出一种专用于硅化合物的分子蒸发热（沸点时,一大气压下）估计法。 本文试将Joshi沸点-折射关系式应用于硅化合物的分子R_T值的计算,并求出若干原子团及键的R_T值。
Abstract: A new method for estimating the molar latent heats of vaporization (at boiling point, under one atmospheric pressure) of silicon compounds is proposed. Some values for molar RT, bond RT and group RT in silicon compounds, calculated by use of the Joshi equation originally developed for organic compounds, are illustrated.
张尔慈. 硅化合物的沸点和若干其他性质的数值关系 [J]. CIESC Journal.
CHANG EKH-TZE (Shenyang Institute of Ghemical Industry., Ministry of Ghemical Industry). A STUDY OF THE NUMERICAL RELATIONSHIPS BETWEEN BOILING POINT AND SOME OTHER PHYSICAL PROPERTIES OF SILICON COMPOUNDS[J]. .
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