Abstract: The SO₂-sensitive organic silicate film was formed on the interdigital capacitor based on silicon dioxide by means of sol-gel process and spin-on technique.Measurements of interdigital capacitance were performed at room temperature for frequencies 0.1 kHz,1 kHz and 10 kHz. It was shown that there was a linear relationship between the capacitance and the concentration of sulfur dioxide gas. The influences of the measurement frequency and the film thickness of silicate on the sensitivity of the sensor to SO₂ gas were discussed.Organically modified N,N-diethylaminopropyltrimethoxysilane showed a much higher sensitivity.

Key words:

二氧化硫, 化学传感器, 硅酸酯膜

摘要： 采用溶胶-凝胶法和自旋涂覆技术在二氧化硅为基材的梳状电极电容器（IDC）上形成有机硅酸酯的气敏涂层.在室温和0.1 kHz、1 kHz、10 kHz频率下测定了该电容器的电容，实验表明其电容的改变值和气氛中二氧化硫(SO₂)浓度的变化呈线性关系，亦与测量时使用的频率和气敏涂层的厚度密切相关.在本实验条件下，经有机改性的N,N-二乙基氨丙基三甲氧基硅烷比同类的硅酸酯对SO2有更高的灵敏度.

关键词:

二氧化硫, 化学传感器, 硅酸酯膜