Abstract:

A chemical reaction model with main reactions and parasitic reactions of GaN growth was proposed.The growth process was described as some steps of main reactions with some steps of parasitic reactions, which evolved parallel with the main ones.The growth rate of GaN obtained through numerical simulation was compared with the one from experiment reported in literature, and was consistent with the result of literature.when their experimental outcomes obtained in a real MOCVD reactor were transformed to the same condition of the simulation model.It was shown that the GaN growth rate was influenced sharply by the concentration of TMGa, but there was no simply linear relationship between them.

Key words:

GaN生长模型, 数值模拟, 沉积速率

摘要：

提出了GaN生长的主反应和寄生化学反应模型，用主反应和与主反应平行进行的寄生反应来描述GaN的实际生长过程，并将此数值模拟得到的GaN沉积速率和文献中的实验数据进行了对比，发现与在实际MOCVD反应器上相同反应条件时得到的实验数据吻合较好。此外还发现TMGa浓度对GaN的生长速率有较大影响，但并非简单的线性关系。

关键词:

GaN生长模型, 数值模拟, 沉积速率