Abstract: [Ni₈₀Fe₂₀/Cu]n multilayers were fabricated onto n-Si(111) substrates by double pulse potentiostatic electrodeposition from single bath. The typical cross-sectional image of multilayer was ovserved by SEM, and the superlattice structure was characterized by high-angle X-ray diffraction. The giant magnetoresistance (GMR) properties of multilayers were investigated by four-probe technique. The results indicated that, with the increase of Cu layer thickness, GMR value showed a periodical oscillation tendency, while increasing the thickness of NiFe layers, GMR value decreased after achieving its maximum. The room-temperature GMR value was up to 6.4% for [NiFe(1.6nm)/Cu(2.6nm)]₈₀, and the minimum saturation field is only 750Oe. Hysteresis loops revealed that the anti-ferromagnetic coupled multilayers with small squareness ratio were suitable for magnetic head materials.

Key words:

电沉积, 多层膜, 巨磁电阻, 超晶格, NiFe/Cu

摘要：

采用单槽控电位双脉冲技术在n-Si（111）晶面上制备了［Ni₈₀Fe₂₀/Cu］_n多层膜，用SEM观测了多层膜的断面形貌，利用X射线衍射（XRD）表征了多层膜的超晶格结构。采用四探针法研究了多层膜的巨磁电阻（GMR）性能，结果表明，多层膜的GMR值随着Cu层厚度的变化发生周期性振荡，随着NiFe层厚度的增加先增大后减小;当样品结构为［NiFe（1.6 nm）/Cu（2.6 nm）］₈₀时，GMR值可达6.4%;多层膜的最低饱和磁场仅为750Oe。磁滞回线测试结果表明，反铁磁耦合多层膜具有较小的矩形比，更适宜作为磁头材料。

关键词:

电沉积, 多层膜, 巨磁电阻, 超晶格, NiFe/Cu