• TRANSPORT PHENOMENA & FLUID MECHANICS • Previous Articles     Next Articles

Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field

  

  • Received:1900-01-01 Revised:1900-01-01 Online:2006-02-28 Published:2006-02-28

Simulation of Heat Transfer and Oxygen Transport in a Czochralski Silicon System with and Without a Cusp Magnetic Field

YU Huiping(宇慧平), WANG Jing(王敬), SUI Yunkang(隋允康), DAI Xiaolin(戴小林) and AN Guoping(安国平)   

  1. Numerical Simulation Center of Engineering, Beijing University of Technology, Beijing 100022, China
    General Research Institute for Nonferrous Metals, Beijing 100088, China
  • 通讯作者: YU Huiping(宇慧平)

Key words: Czochralski, magnetic field, turbulent model, silicon

摘要: Simulations of heat transfer and oxygen transport during a Czochralski growth of silicon with and without a cusp magnetic field were carried out. A finite volume method with a low-Reynolds number K-ε   model proposed by Jones-Launder was employed. The numerical results were compared with the experimental data in the literature. It is found that the calculated results are in good agreement with the experimental data. 

关键词: Czochralski;magnetic field;turbulent model;silicon