Kinetic and Microstructure of SiC Deposited from SiCl4-CH4-H2

›› 2009, Vol. 17 ›› Issue (3): 419-426.

• CATALYSIS, KINETICS AND REACTORS • Previous Articles Next Articles

Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

YANG Yan^1,2, ZHANG Weigang¹

1. State Key Lab of Multi-phase Complex Systems, Ins1. State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS, Beijing 100190, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received:2008-07-05 Revised:2009-04-18 Online:2009-06-28 Published:2009-06-28
Supported by:
Supported by the One Hundred Talents Program of Chinese Academy of Sciences

Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

杨艳^1,2, 张伟刚¹

1. State Key Lab of Multi-phase Complex Systems, Ins1. State Key Lab of Multi-phase Complex Systems, Institute of Process Engineering, CAS, Beijing 100190, China;
2. Graduate University of Chinese Academy of Sciences, Beijing 100049, China

通讯作者: ZHANG Weigang,E-mail:wgzhang@home.ipe.ac.cn
基金资助:
Supported by the One Hundred Talents Program of Chinese Academy of Sciences

Abstract

Abstract: Silicon carbide was prepared from SiCl₄-CH₄-H₂ gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH₂Cl₂, SiHCl₃ and SiCl₂ formed from decomposition of SiCl₄ and CH₄ contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol^-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

Key words: chemical vapor deposition, SiC, kinetics, microstructure

摘要： Silicon carbide was prepared from SiCl₄-CH₄-H₂ gaseous precursors by isothermal, isobaric chemical vapor deposition (CVD) at atmospheric pressure and temperatures ranging from 900℃ to 1100℃. Kinetic studies showed that carbosilane of SiH₂Cl₂, SiHCl₃ and SiCl₂ formed from decomposition of SiCl₄ and CH₄ contributed to the deposition of hexangular facet and granular pebble structured SiC. An average apparent activation energy of 152 kJ·mol^-1 was determined. The overall CVD process was controlled not only by the surface reactions but also by complex gas phase reactions. The as-deposited thin film was characterized using scanning electron microscopy, X-ray diffraction and transmission electron microscopy, these analysis showed that the deposited thin film consisted of pure phase of the β-SiC, the growth morphology of β-SiC differs from hexangular facet to granular pebble structures, which varied with substrate length and CVD temperature.

关键词: chemical vapor deposition, SiC, kinetics, microstructure

YANG Yan, ZHANG Weigang. Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂[J]. , 2009, 17(3): 419-426.

杨艳, 张伟刚. Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂[J]. CIESC Journal, 2009, 17(3): 419-426.

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Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

Kinetic and Microstructure of SiC Deposited from SiCl₄-CH₄-H₂

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