CIESC Journal ›› 2024, Vol. 75 ›› Issue (1): 1-19.DOI: 10.11949/0438-1157.20230655
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Liuyang YU1(), Shubo LIU1, Shengzhe JIA1, Hang MA2, Banglong WAN2, Qiwen SU2, Jingkang WANG1, Weiwei TANG1(), Yujuan HE2(), Junbo GONG1()
Received:
2023-06-30
Revised:
2023-08-03
Online:
2024-03-11
Published:
2024-01-25
Contact:
Weiwei TANG, Yujuan HE, Junbo GONG
余留洋1(), 刘书博1, 贾晟哲1, 马航2, 万邦隆2, 苏琦雯2, 王静康1, 汤伟伟1(), 贺豫娟2(), 龚俊波1()
通讯作者:
汤伟伟,贺豫娟,龚俊波
作者简介:
余留洋(2001—),女,硕士研究生,lyyu@tju.edu.cn
基金资助:
CLC Number:
Liuyang YU, Shubo LIU, Shengzhe JIA, Hang MA, Banglong WAN, Qiwen SU, Jingkang WANG, Weiwei TANG, Yujuan HE, Junbo GONG. Current status and research progress of purification technology of electronic grade phosphoric acid[J]. CIESC Journal, 2024, 75(1): 1-19.
余留洋, 刘书博, 贾晟哲, 马航, 万邦隆, 苏琦雯, 王静康, 汤伟伟, 贺豫娟, 龚俊波. 电子级磷酸的纯化精制技术发展现状与研究进展[J]. 化工学报, 2024, 75(1): 1-19.
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级别 | 单项金属杂质 | 控制微粒粒径 | 颗粒数 | IC集成度 |
---|---|---|---|---|
SEMI-C1、C2 | ≤100 ppb | ≥1 μm | ≤25个/ml | 64 K |
SEMI-C7 | ≤10 ppb | ≥0.5 μm | ≤25个/ml | 4 M |
SEMI-C8 | ≤1 ppb | ≥0.5 μm | ≤5个/ml | 256 M |
SEMI-C12 | ≤0.1 ppb | ≥0.2 μm | 协定 | 16 G |
Table 1 The purity of wet electronic chemicals in Semiconductor Equipment Materials International(SEMI)[10]
级别 | 单项金属杂质 | 控制微粒粒径 | 颗粒数 | IC集成度 |
---|---|---|---|---|
SEMI-C1、C2 | ≤100 ppb | ≥1 μm | ≤25个/ml | 64 K |
SEMI-C7 | ≤10 ppb | ≥0.5 μm | ≤25个/ml | 4 M |
SEMI-C8 | ≤1 ppb | ≥0.5 μm | ≤5个/ml | 256 M |
SEMI-C12 | ≤0.1 ppb | ≥0.2 μm | 协定 | 16 G |
指标 | SEMI指标 | ||
---|---|---|---|
Grade 1(G1) | Grade 2(G2) | Grade 3(G3) | |
chloride(Cl-)/ppm | 1 | 1 | 1 |
nitrate(NO | 5 | 5 | 5 |
sulfate(SO | — | 12 | 12 |
aluminum(Al)/ppb | 500 | 300 | 50 |
antimony(Sb)/ppb | 10000 | 3500 | 1000 |
arsenic(As)/ppb | 50 | 50 | 50 |
barium(Ba)/ppb | — | — | 50 |
cadmium(Cd)/ppb | — | 450 | 50 |
calcium(Ca)/ppb | 1500 | 1100 | 150 |
chromium(Cr)/ppb | 200 | 200 | 50 |
cobalt(Co)/ppb | 50 | 50 | 50 |
copper(Cu)/ppb | 50 | 50 | 50 |
gold(Au)/ppb | 300 | 150 | 50 |
iron(Fe)/ppb | 2000 | 700 | 100 |
lead(Pb)/ppb | 300 | 300 | 50 |
lithium(Li)/ppb | 100 | 100 | 10 |
magnesium(Mg)/ppb | 200 | 200 | 50 |
manganese(Mn)/ppb | 100 | 100 | 50 |
nickel(Ni)/ppb | 200 | 200 | 50 |
potassium(K)/ppb | 1500 | 450 | 150 |
sodium(Na)/ppb | 2500 | 500 | 250 |
strontium(Sr)/ppb | 100 | 100 | 10 |
zinc(Zn)/ppb | 2000 | 400 | 50 |
titanium (Ti)/ppb | 300 | 300 | 50 |
Table 2 Standard for electronic grade phosphoric acid in Semiconductor Equipment Materials International(SEMI)[11-12]
指标 | SEMI指标 | ||
---|---|---|---|
Grade 1(G1) | Grade 2(G2) | Grade 3(G3) | |
chloride(Cl-)/ppm | 1 | 1 | 1 |
nitrate(NO | 5 | 5 | 5 |
sulfate(SO | — | 12 | 12 |
aluminum(Al)/ppb | 500 | 300 | 50 |
antimony(Sb)/ppb | 10000 | 3500 | 1000 |
arsenic(As)/ppb | 50 | 50 | 50 |
barium(Ba)/ppb | — | — | 50 |
cadmium(Cd)/ppb | — | 450 | 50 |
calcium(Ca)/ppb | 1500 | 1100 | 150 |
chromium(Cr)/ppb | 200 | 200 | 50 |
cobalt(Co)/ppb | 50 | 50 | 50 |
copper(Cu)/ppb | 50 | 50 | 50 |
gold(Au)/ppb | 300 | 150 | 50 |
iron(Fe)/ppb | 2000 | 700 | 100 |
lead(Pb)/ppb | 300 | 300 | 50 |
lithium(Li)/ppb | 100 | 100 | 10 |
magnesium(Mg)/ppb | 200 | 200 | 50 |
manganese(Mn)/ppb | 100 | 100 | 50 |
nickel(Ni)/ppb | 200 | 200 | 50 |
potassium(K)/ppb | 1500 | 450 | 150 |
sodium(Na)/ppb | 2500 | 500 | 250 |
strontium(Sr)/ppb | 100 | 100 | 10 |
zinc(Zn)/ppb | 2000 | 400 | 50 |
titanium (Ti)/ppb | 300 | 300 | 50 |
项目 | 指标 | |
---|---|---|
E1 | E2 | |
易氧化物(以H3PO4计)/%(质量分数) | ≤0.005 | ≤0.001 |
硝酸盐(NO | ≤5 | ≤0.5 |
硫酸盐(SO | ≤10 | ≤5 |
氯化物(Cl-)/ppm | ≤1 | ≤0.5 |
铝(Al)/ppb | ≤200 | ≤50 |
硼(B)/ppb | — | ≤50 |
锑(Sb)/ppb | ≤3000 | ≤300 |
砷(As)/ppb | ≤100 | ≤20 |
钡(Ba)/ppb | ≤100 | ≤20 |
镉(Cd)/ppb | ≤100 | ≤20 |
钙(Ca)/ppb | ≤1000 | ≤50 |
铬(Cr)/ppb | ≤100 | ≤20 |
钴(Co)/ppb | ≤100 | ≤20 |
铜(Cu)/ppb | ≤50 | ≤20 |
镓(Ga)/ppb | ≤100 | ≤10 |
金(Au)/ppb | ≤100 | ≤10 |
铁(Fe)/ppb | ≤300 | ≤50 |
铅(Pb)/ppb | ≤100 | ≤20 |
锂(Li)/ppb | ≤100 | ≤10 |
镁(Mg)/ppb | ≤100 | ≤20 |
锰(Mn)/ppb | ≤100 | ≤20 |
镍(Ni)/ppb | ≤100 | ≤20 |
钾(K)/ppb | ≤100 | ≤20 |
银(Ag)/ppb | ≤100 | ≤20 |
钠(Na)/ppb | ≤500 | ≤50 |
锡(Sn)/ppb | — | ≤10 |
锶(Sr)/ppb | ≤100 | ≤20 |
钛(Ti)/ppb | ≤100 | ≤50 |
锌(Zn)/ppb | ≤100 | ≤50 |
Table 3 Quality standard for Electronic Grade Phosphoric Acid in GB/T 28159—2011
项目 | 指标 | |
---|---|---|
E1 | E2 | |
易氧化物(以H3PO4计)/%(质量分数) | ≤0.005 | ≤0.001 |
硝酸盐(NO | ≤5 | ≤0.5 |
硫酸盐(SO | ≤10 | ≤5 |
氯化物(Cl-)/ppm | ≤1 | ≤0.5 |
铝(Al)/ppb | ≤200 | ≤50 |
硼(B)/ppb | — | ≤50 |
锑(Sb)/ppb | ≤3000 | ≤300 |
砷(As)/ppb | ≤100 | ≤20 |
钡(Ba)/ppb | ≤100 | ≤20 |
镉(Cd)/ppb | ≤100 | ≤20 |
钙(Ca)/ppb | ≤1000 | ≤50 |
铬(Cr)/ppb | ≤100 | ≤20 |
钴(Co)/ppb | ≤100 | ≤20 |
铜(Cu)/ppb | ≤50 | ≤20 |
镓(Ga)/ppb | ≤100 | ≤10 |
金(Au)/ppb | ≤100 | ≤10 |
铁(Fe)/ppb | ≤300 | ≤50 |
铅(Pb)/ppb | ≤100 | ≤20 |
锂(Li)/ppb | ≤100 | ≤10 |
镁(Mg)/ppb | ≤100 | ≤20 |
锰(Mn)/ppb | ≤100 | ≤20 |
镍(Ni)/ppb | ≤100 | ≤20 |
钾(K)/ppb | ≤100 | ≤20 |
银(Ag)/ppb | ≤100 | ≤20 |
钠(Na)/ppb | ≤500 | ≤50 |
锡(Sn)/ppb | — | ≤10 |
锶(Sr)/ppb | ≤100 | ≤20 |
钛(Ti)/ppb | ≤100 | ≤50 |
锌(Zn)/ppb | ≤100 | ≤50 |
项目 | ICP-OES | ICP-MS | GFAAS |
---|---|---|---|
检出限 | 绝大部分元素很好 | 绝大部分元素非常杰出 | 部分元素非常杰出 |
样品分析能力 | 5~30个元素/(样品·min) | 2~6 min/样品中所有元素 | 4 min/(样品·元素) |
线性动态范围 | 约105 | 约108 | 约102 |
固体溶解量(最大可容忍量) | 2%~25% | 0.1%~0.4% | >20% |
可测元素数 | >73 | >75 | >50 |
样品用量 | 多 | 少 | 很少 |
半定量分析 | 能 | 能 | 不能 |
同位素分析 | 不能 | 能 | 不能 |
日常操作 | 容易 | 容易 | 容易 |
方法实验开发 | 需专业技术 | 需专业技术 | 需专业技术 |
无人控制操作 | 能 | 能 | 能 |
易燃气体 | 无 | 无 | 无 |
操作费用 | 高 | 高 | 中等 |
基本费用 | 高 | 很高 | 中等/高 |
Table 4 The detailed comparison of ICP-MS, ICP-OES and GFAAS[13]
项目 | ICP-OES | ICP-MS | GFAAS |
---|---|---|---|
检出限 | 绝大部分元素很好 | 绝大部分元素非常杰出 | 部分元素非常杰出 |
样品分析能力 | 5~30个元素/(样品·min) | 2~6 min/样品中所有元素 | 4 min/(样品·元素) |
线性动态范围 | 约105 | 约108 | 约102 |
固体溶解量(最大可容忍量) | 2%~25% | 0.1%~0.4% | >20% |
可测元素数 | >73 | >75 | >50 |
样品用量 | 多 | 少 | 很少 |
半定量分析 | 能 | 能 | 不能 |
同位素分析 | 不能 | 能 | 不能 |
日常操作 | 容易 | 容易 | 容易 |
方法实验开发 | 需专业技术 | 需专业技术 | 需专业技术 |
无人控制操作 | 能 | 能 | 能 |
易燃气体 | 无 | 无 | 无 |
操作费用 | 高 | 高 | 中等 |
基本费用 | 高 | 很高 | 中等/高 |
工艺路线 | 原料及动力 | 消耗量 |
---|---|---|
热法磷酸工艺 | 磷矿 | 3.0~3.4 t |
黏土 | 0.2~0.3 t | |
焦炭 | 0.5~0.6 t | |
工艺用水 | 40 m3 | |
冷却用水 | 120 m3 | |
电力 | 5700~6000 kW·h | |
湿法磷酸工艺 | 磷矿 | 2.6~3.5 t |
硫酸 | 2.4~2.9 t | |
工艺用水 | 3.6~52 m3 | |
冷却用水 | 100~150 m3 | |
电力 | 120~180 kW·h | |
蒸汽 | 0.2~2.4 t |
Table 5 Comparison of raw materials and power required to produce one ton of industrial phosphoric acid in thermal and wet routes[3]
工艺路线 | 原料及动力 | 消耗量 |
---|---|---|
热法磷酸工艺 | 磷矿 | 3.0~3.4 t |
黏土 | 0.2~0.3 t | |
焦炭 | 0.5~0.6 t | |
工艺用水 | 40 m3 | |
冷却用水 | 120 m3 | |
电力 | 5700~6000 kW·h | |
湿法磷酸工艺 | 磷矿 | 2.6~3.5 t |
硫酸 | 2.4~2.9 t | |
工艺用水 | 3.6~52 m3 | |
冷却用水 | 100~150 m3 | |
电力 | 120~180 kW·h | |
蒸汽 | 0.2~2.4 t |
Table 6 Comparison of removal of impurity ions from phosphoric acid by solvent extraction
特征 | 悬浮熔融结晶 | 层熔融结晶 |
---|---|---|
结晶温度 | 根据相图确定 | 根据相图确定 |
生长速率 | 10-8~10-7 m/s | 10-7~10-5 m/s |
结晶过程热传递 | 通过熔体 | 通过晶体层 |
晶体生长模式 | 晶体以颗粒状的形式生长 | 晶体以晶体层的形式粘贴在结晶器内壁 |
固液分离 | 难 | 易 |
转动装置 | 有 | 无 |
Table 7 Difference between suspension melt crystallization and layer melt crystallization[75]
特征 | 悬浮熔融结晶 | 层熔融结晶 |
---|---|---|
结晶温度 | 根据相图确定 | 根据相图确定 |
生长速率 | 10-8~10-7 m/s | 10-7~10-5 m/s |
结晶过程热传递 | 通过熔体 | 通过晶体层 |
晶体生长模式 | 晶体以颗粒状的形式生长 | 晶体以晶体层的形式粘贴在结晶器内壁 |
固液分离 | 难 | 易 |
转动装置 | 有 | 无 |
Table 8 Comparison of phosphoric acid purification techniques
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