CIESC Journal ›› 2025, Vol. 76 ›› Issue (4): 1820-1830.DOI: 10.11949/0438-1157.20241135

• Material science and engineering, nanotechnology • Previous Articles     Next Articles

Preparation and high-resolution lithography study of organic tin photoresists containing acrylates

Yingdong ZHAO1(), Peijun JI2(), Riyao CONG1, Haichao FU3, Jialong ZHANG2(), Pengzhong CHEN1(), Xiaojun PENG1()   

  1. 1.State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials Oriented Chemical Engineering, Dalian University of Technology, Dalian 116024, Liaoning, China
    2.Shanghai Research Institute of Petrochemical Technology, SINOPEC, Shanghai 201208, China
    3.Research and Development Center of Valiant Co. , Ltd. , Yantai 264006, Shandong, China
  • Received:2024-10-14 Revised:2024-11-30 Online:2025-05-12 Published:2025-04-25
  • Contact: Jialong ZHANG, Pengzhong CHEN, Xiaojun PENG

丙烯酸配位有机锡光刻胶的制备及高分辨光刻研究

赵英东1(), 姬沛君2(), 丛日尧1, 付海超3, 张家龙2(), 陈鹏忠1(), 彭孝军1()   

  1. 1.大连理工大学智能材料化工前沿科学中心,精细化工国家重点实验室,辽宁 大连 116024
    2.中石化(上海)石油化工 研究院有限公司,上海 201208
    3.中节能万润股份有限公司研发中心,山东 烟台 264006
  • 通讯作者: 张家龙,陈鹏忠,彭孝军
  • 作者简介:赵英东(1998—),男,博士研究生,billzyd@mail.dlut.edu.cn
    姬沛君(1999—),女,工程师,jipj1995.sshy@sinopec.com
  • 基金资助:
    国家自然科学基金项目(22378052);山东省重点研发(重大科技创新工程)项目(2021CXGC010308)

Abstract:

The rapid advancements in lithography within the integrated circuit industry have necessitated enhanced performance from photoresists. Organic-tin complexes show excellent properties in lithography resolution and line edge roughness, but their lithography sensitivity and film stability are relatively poor. This study presents an acrylic-coordinated triphenyl-tin carboxylate photoresist, designated as Sn1Ac, which is suitable for both deep-ultraviolet and electron-beam lithography applications. By forming hydrogen bonds with the additive tetrakis (3-mercaptopropionic acid) pentaerythritol ester, the instability of spin-coated films has been effectively eliminated, resulting in a photolithography film retention rate exceeding 93%. The hybrid films demonstrate excellent negative patterning properties. Under electron-beam lithography, these hybrid films achieve a resolution better than 15 nm and a line edge roughness of less than 2 nm. Through X-ray photoelectron spectroscopy and other testing methods, this paper proposed the synergistic cross-linking exposure mechanism of tin-carbonate and thiol-ene click reactions.

Key words: photoresist, spin-coating, surface, complexes, nanomaterials, photo-responsive materials

摘要:

集成电路产业中光刻技术的迅速发展对光刻胶的性能提出了更高的要求。有机-锡配合物在光刻分辨率和线边缘粗糙度方面表现出优异的特性,但其光刻灵敏度和薄膜稳定性相对较差。本文报道了一种新型的丙烯酸配位的三苯基锡光刻材料Sn1Ac,该材料可同时用于深紫外光刻和电子束光刻。通过与四(3-巯基丙酸)季戊四醇酯(PETMP)形成氢键,成功克服了旋涂薄膜稳定性差的缺陷,其光刻留膜率超过93%。Sn1Ac与PETMP的混合薄膜显示出卓越的负性图案化性能。在电子束光刻条件下,该混合薄膜的分辨率优于15 nm,且线边缘粗糙度低于2 nm。通过X射线光电子能谱等测试手段,提出了锡-碳酸根和硫醇-烯点击反应的协同交联曝光机理。

关键词: 光刻胶, 旋涂, 表面, 配合物, 纳米材料, 光响应材料

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