化工学报 ›› 2021, Vol. 72 ›› Issue (9): 4496-4503.doi: 10.11949/0438-1157.20210215

• 热力学 • 上一篇    下一篇

氮掺杂Stone-Wales缺陷石墨烯吸附H2S的密度泛函理论研究

马生贵1,2,3(),田博文1,周雨薇1,陈琳1,江霞1,2,3(),高涛4   

  1. 1.四川大学建筑与环境学院，四川 成都 610065
    2.国家烟气脱硫工程技术研究中心，四川 成都 610065
    3.四川大学 宜宾园区，四川 宜宾 644000
    4.四川大学原子与分子物理研究所，四川 成都 610065
  • 收稿日期:2021-02-04 修回日期:2021-05-11 出版日期:2021-09-05 发布日期:2021-09-05
  • 通讯作者: 江霞 E-mail:masgui@scu.edu.cn;xjiang@scu.edu.cn
  • 作者简介:马生贵(1990—)，男，博士，助理研究员，masgui@scu.edu.cn
  • 基金资助:
    国家自然科学基金面上项目(51778383);四川大学-泸州市校市战略合作项目(2020CDLZ-15);大气污染源头控制与资源化四川省青年科技创新研究团队(2020JDTD0005)

DFT study of adsorption of H2S on N-doped Stone-Wales defected graphene

Shenggui MA1,2,3(),Bowen TIAN1,Yuwei ZHOU1,Lin CHEN1,Xia JIANG1,2,3(),Tao GAO4   

  1. 1.College of Architecture and Environment, Sichuan University, Chengdu 610065, Sichuan, China
    2.National Engineering Research Center for Flue Gas Desulfurization, Sichuan University, Chengdu 610065, Sichuan, China
    3.Sichuan University Yibin Park, Yibin 644000, Sichuan, China
    4.Institute of Atomic and Molecular Physics, Sichuan University, Chengdu 610065, Sichuan, China
  • Received:2021-02-04 Revised:2021-05-11 Published:2021-09-05 Online:2021-09-05
  • Contact: Xia JIANG E-mail:masgui@scu.edu.cn;xjiang@scu.edu.cn

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摘要：

利用密度泛函理论研究H2S分子在氮掺杂Stone-Wales（SW）缺陷石墨烯上的吸附行为，通过吸附能、差分电荷密度、Bader电荷和电子态密度等分析了H2S分子在SW缺陷石墨烯及氮掺杂SW缺陷石墨烯上的吸附差异。计算结果表明氮原子掺杂可以有效提升H2S分子与石墨烯表面的相互作用，并加强二者之间的电荷转移。其中，氮原子主要作为电子传递的桥梁参与H2S与石墨烯表面之间的电荷转移。H2S分子被选择性吸附在SW缺陷及氮掺杂SW缺陷石墨烯的五元碳环中心处，这说明五元碳环的电荷分布促进H2S分子的吸附行为。

关键词: 密度泛函理论, 氮掺杂, Stone-Wales缺陷, 石墨烯, H2S吸附

Abstract:

Density functional theory is used to study the adsorption behavior of H2S molecules on nitrogen-doped Stone-Wales (SW) defected graphene. The adsorption differences of H2S molecules on SW defect graphene and nitrogen-doped SW defected graphene were analyzed by adsorption energy, differential charge density, Bader charge and electronic density of states. Computation results showed that doping of N atom can improve the interaction between H2S molecule and graphene sheet effectively, and it can increase the charge transfer between them. The nitrogen atom is mainly used as the bridge for electron transfer between H2S and graphene surface. H2S molecules were adsorbed selectively on the hollow of pentatomic carbon of SW defected graphene and nitrogen-doped SW defected graphene, which indicated that the charge distribution of the pentatomic carbon could promote the occurrence of adsorption.

Key words: density functional theory (DFT), N-doped, Stone-Wales defect, graphene, H2S adsorption

中图分类号: 

  • X 511

图1

能量收敛性测试：(a) k点；(b) 截断能"

图2

SW缺陷石墨烯几何优化构型俯视图(Top、Bridge、Hollow-5和Hollow-7指H2S分子的吸附位点，数字1~5指氮原子的掺杂位点)"

表1

SW缺陷石墨烯吸附H2S分子的吸附能"

H2S分子初始构型的几何方向吸附位点吸附能/eV
H-S键平行于石墨烯表面Top-0.40
Hollow-5-0.15
Hollow-7-0.14
Bridge-0.17
硫原子朝向石墨烯Top-0.35
Hollow-5-0.51
Hollow-7-0.13
Bridge-0.35
氢原子朝向石墨烯Top-0.15
Hollow-5-0.16
Hollow-7-0.15
Bridge-0.14

图3

H2S分子在SW缺陷石墨烯的三种吸附位点上的最稳定构型：(a) Top位点上吸附构型的侧视图和俯视图；(b) Hollow-5位点上吸附构型的侧视图和俯视图；(c) Bridge位点上吸附构型的侧视图和俯视图"

图4

S-Hollow-5吸附体系的电荷密度(a)和差分电荷密度图(b)(等值面值：0.0001)"

表2

S-Hollow-5吸附体系的Bader电荷"

原子序号吸附前电荷量/e吸附后电荷量/e转移电荷量/e
C1+0.005+0.022+0.017
2-0.079-0.012+0.067
3-0.038-0.040-0.002
4+0.180+0.046-0.134
5+0.042-0.071-0.113
S——+0.049+0.049
H1—-0.010-0.010
2—-0.021-0.021

图5

S-Hollow-5吸附体系的态密度、石墨烯表面的局域态密度和H2S分子的局域态密度"

表3

氮掺杂SW缺陷石墨烯的形成能"

氮掺杂位点Ef /eV
12.94
23.14
33.93
43.75
52.72

图6

H2S分子在氮掺杂SW缺陷石墨烯上的三种吸附体系的稳定构型：(a) S-H体系吸附构型的侧视图和俯视图；(b) S-T体系吸附构型的侧视图和俯视图；(c) H-H体系吸附构型的侧视图和俯视图"

表4

氮掺杂SW缺陷石墨烯吸附H2S分子的吸附能"

吸附构型Eads /eV
S-T-0.60
S-H-0.56
H-H-0.65

图7

H-H吸附体系的电荷密度(a)和差分电荷密度图(b) (等值面值：0.0001)"

表5

H-H吸附体系的Bader电荷"

原子序号吸附前电荷量/e吸附后电荷量/e转移电荷量/e
C1+0.512+0.5120
2+0.339+0.3390
3-0.101-0.105-0.004
4+0.015+0.006-0.009
N—-1.283-1.2830
S——-0.076-0.076
H1—+0.053+0.053
2—+0.051+0.051

图8

H-H吸附体系的态密度、石墨烯表面的局域态密度和H2S分子的局域态密度"

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