CIESC Journal ›› 2024, Vol. 75 ›› Issue (1): 83-94.DOI: 10.11949/0438-1157.20230668

• Reviews and monographs • Previous Articles     Next Articles

Recent advances in the removal of trace boron and phosphorus impurities from electronic grade silicon raw materials

Kexin YAN1(), Hongtao JIANG2, Weiqun GAO1, Xiaohui GUO2, Weizhen SUN1(), Ling ZHAO1   

  1. 1.State Key Laboratory of Chemical Engineering, East China University of Science and Technology, Shanghai 200237, China
    2.Xinjiang GCL New Energy Materials Technology Co. , Ltd. , Changji 831100, Xinjiang, China
  • Received:2023-07-03 Revised:2023-09-04 Online:2024-03-11 Published:2024-01-25
  • Contact: Weizhen SUN

电子级多晶硅原料中痕量硼磷杂质的脱除研究进展

闫可欣1(), 姜洪涛2, 高维群1, 郭晓晖2, 孙伟振1(), 赵玲1   

  1. 1.华东理工大学化学工程联合国家重点实验室,上海 200237
    2.新疆协鑫新能源材料科技有限公司,新疆 昌吉 831100
  • 通讯作者: 孙伟振
  • 作者简介:闫可欣(2001—),女,硕士研究生,yankxin123@163.com
  • 基金资助:
    新疆维吾尔自治区重大科技专项(2022A01006-1)

Abstract:

The content of trace boron and phosphorus impurities in trichlorosilane and hydrogen is the main factor affecting the quality of polysilicon. Improving the removal efficiency of boron and phosphorus impurities is crucial for the large-scale production of electronic-grade polysilicon, which is essential for advancing China’s energy and information industries. This paper provides a summary of the research progress on removing boron and phosphorus impurities in SiHCl3 and H2, and highlights the characteristics of various purification methods. The coupled reaction-adsorption-rectification technology, which combines the advantages of rectification and chemical purification, is the most promising method for purifying SiHCl3. The adsorption method, known for its high sensitivity to boron and phosphorus impurities, is the most commonly used method for purifying H2. Finally, the thesis systematically discusses the structural characteristics of adsorbents and their relationship with adsorption performance. It also summarizes the challenges and development direction of removing boron and phosphorus impurities from polysilicon raw materials.

Key words: boron and phosphorus impurities, adsorption, distillation, reactive rectification, trichlorosilane, hydrogen

摘要:

三氯氢硅和氢气中痕量硼磷杂质的含量是影响多晶硅品质的主要因素。提高硼磷杂质的脱除效率有利于电子级多晶硅的大规模生产,实现我国能源信息产业升级。综述了三氯氢硅和氢气中硼磷杂质脱除方法的研究进展,重点介绍了各类提纯方法的特点。其中,反应-吸附-精馏耦合技术集合了精馏法和化学提纯法的优点,是三氯氢硅精制过程中最具有发展前景的方法;吸附法凭借其负载的活性物质对硼磷杂质的高选择性,成为氢气精制最常使用的工艺。最后,系统探讨了吸附剂结构特点及与吸附性能的构效关系,在此基础上总结并展望了多晶硅原料中硼磷杂质脱除面临的挑战和发展方向。

关键词: 硼磷杂质, 吸附, 蒸馏, 反应精馏, 三氯氢硅,

CLC Number: