CIESC Journal ›› 2020, Vol. 71 ›› Issue (4): 1836-1843.DOI: 10.11949/0438-1157.20191423
• Material science and engineering, nanotechnology • Previous Articles Next Articles
Shaofei ZHAO1(),Peng LIU1,Wanping LI1,Xiaohong ZENG1,Yuanhong ZHONG1,Lin YU1(),Huaqiang ZENG1,2()
Received:
2019-11-25
Revised:
2020-02-05
Online:
2020-04-05
Published:
2020-04-05
Contact:
Lin YU,Huaqiang ZENG
赵少飞1(),刘鹏1,李婉萍1,曾小红1,钟远红1,余林1(),曾华强1,2()
通讯作者:
余林,曾华强
作者简介:
赵少飞(1985—),男,博士研究生,基金资助:
CLC Number:
Shaofei ZHAO, Peng LIU, Wanping LI, Xiaohong ZENG, Yuanhong ZHONG, Lin YU, Huaqiang ZENG. One-step electrodeposition and pseudocapacitance properties of 3D Ni3S2 supported on Ni foam[J]. CIESC Journal, 2020, 71(4): 1836-1843.
赵少飞, 刘鹏, 李婉萍, 曾小红, 钟远红, 余林, 曾华强. 一步电沉积法制备硫化镍/泡沫镍材料及其赝电容性能研究[J]. 化工学报, 2020, 71(4): 1836-1843.
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电极材料 | 电流密度/(A/g) | 比电容/(F/g) | 循环后比电容/(F/g) | 文献 |
---|---|---|---|---|
3D Ni3S2纳米片@NF | 2 | 1370 | 1075.9(1000次,6 A/g) | [ |
核壳结构Ni3S2@NF | 0.8 | 736.64 | 604(1000次,0.8 A/g) | [ |
NiCo2S4 纳米片@C | 1 | 1394.5 | 1581.4(10000次,10 A/g) | [ |
Ni3S2纳米柱/石墨烯@NF | 1 | 1900 | 950(2000次,10 A/g) | [ |
Ni3S2纳米片@NF | 2 | 2885 | 1000(10000次,50 A/g) | [ |
Ni3S2 纳米片@NF | 1 | 773.6 | 575(5000次,5 A/g) | [ |
Ni3S2-Cu1.8S 纳米片@NF | 1 | 1686 | 766.8(1000次,10 A/g) | [ |
NiCo2S4纳米阵列@NF | 1 | 1777 | 815(3000次,10 A/g) | [ |
NiCo2S4纳米片@NF | 1 | 1956 | 1722(5000次,2 A/g) | [ |
Ni1Co1-S@NF | 0.5 | 2553.9 | 1914.6(10000次,20 A/g) | [ |
Ni3S2-NiS | 5 | 1077.3 | 660.5(10000次,20A/g) | [ |
3D Ni3S2@NF-10 | 1 | 2850 | 744(2000次,10 A/g) | 本文 |
Table 1 Comparison of electrochemical performance of reported electrodes with Ni3S2/NF-10
电极材料 | 电流密度/(A/g) | 比电容/(F/g) | 循环后比电容/(F/g) | 文献 |
---|---|---|---|---|
3D Ni3S2纳米片@NF | 2 | 1370 | 1075.9(1000次,6 A/g) | [ |
核壳结构Ni3S2@NF | 0.8 | 736.64 | 604(1000次,0.8 A/g) | [ |
NiCo2S4 纳米片@C | 1 | 1394.5 | 1581.4(10000次,10 A/g) | [ |
Ni3S2纳米柱/石墨烯@NF | 1 | 1900 | 950(2000次,10 A/g) | [ |
Ni3S2纳米片@NF | 2 | 2885 | 1000(10000次,50 A/g) | [ |
Ni3S2 纳米片@NF | 1 | 773.6 | 575(5000次,5 A/g) | [ |
Ni3S2-Cu1.8S 纳米片@NF | 1 | 1686 | 766.8(1000次,10 A/g) | [ |
NiCo2S4纳米阵列@NF | 1 | 1777 | 815(3000次,10 A/g) | [ |
NiCo2S4纳米片@NF | 1 | 1956 | 1722(5000次,2 A/g) | [ |
Ni1Co1-S@NF | 0.5 | 2553.9 | 1914.6(10000次,20 A/g) | [ |
Ni3S2-NiS | 5 | 1077.3 | 660.5(10000次,20A/g) | [ |
3D Ni3S2@NF-10 | 1 | 2850 | 744(2000次,10 A/g) | 本文 |
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