不同降温方式对单晶石墨烯氢气刻蚀的改善

doi:10.11949/j.issn.0438-1157.20170349

化工学报 ›› 2017, Vol. 68 ›› Issue (S1): 254-259.DOI: 10.11949/j.issn.0438-1157.20170349

不同降温方式对单晶石墨烯氢气刻蚀的改善

王施达¹, 段涛¹, 英敏菊^1,2

1. 北京师范大学核科学与技术学院, 北京 100875;
2. 北京市辐射中心, 北京 100875

收稿日期:2017-04-05 修回日期:2017-05-19 出版日期:2017-08-31 发布日期:2017-08-31
通讯作者: 英敏菊,mjying@bnu.edu.cn
基金资助:
国家自然科学基金项目（11675280）；中央高校基本科研业务费专项资金项目。

Reducing hydrogen etching of graphene by using different cooling method

WANG Shida¹, DUAN Tao¹, YING Minju^1,2

1. College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China;
2. Beijing Radiation Center, Beijing 100875, China

Received:2017-04-05 Revised:2017-05-19 Online:2017-08-31 Published:2017-08-31
Supported by:
supported by the National Natural Science Foundation of China(11675280).

摘要/Abstract

摘要：

以化学气相沉积（CVD）的方法在铜衬底上制备了大尺寸的单晶石墨烯。研究了在3种不同降温方式下，石墨烯受氢气刻蚀程度的变化，以及在降温过程中通入甲烷后，对刻蚀的影响与改善，并对刻蚀机理进行了探讨。结果表明：经开盖降温的石墨烯受刻蚀最轻，随炉降温的样品受刻蚀次之，缓慢降温的样品受刻蚀最为严重。在降温过程中通入甲烷之后，3种样品的刻蚀都得到了进一步的改善，且开盖降温样品的结晶质量有大幅提升；随炉降温样品的结晶质量有小幅提升；缓慢降温样品的结晶质量有所下降。

关键词: 单晶石墨烯, 降温方式, 氢, 催化, 刻蚀, 甲烷

Abstract:

Submillimeter single-crystal graphene on copper foils was synthesized by chemical vapor deposition. The influence of cooling rate on hydrogen etching of graphene has been studied by using three different types of cooling method. Methane has been introduced during the cooling process to reduce the etching effect and the etching mechanism has been discussed. The results show that fast cooling by just opening the furnace after graphene growth has the lowest etching effect,while the furnace cooling results in intermediate level of etching,and the slow cooling has the most serious etching. The etching damage reduced after methane is introduced during the cooling process. The crystal quality of open furnace cooling graphene was highly increased,while for the furnace cooling graphene it increased slightly,for the slow cooling graphene,the crystal quality decreased.

Key words: single-crystal graphene, cooling method, hydrogen, catalysis, etching, methane

中图分类号:

王施达, 段涛, 英敏菊. 不同降温方式对单晶石墨烯氢气刻蚀的改善[J]. 化工学报, 2017, 68(S1): 254-259.

WANG Shida, DUAN Tao, YING Minju. Reducing hydrogen etching of graphene by using different cooling method[J]. CIESC Journal, 2017, 68(S1): 254-259.

参考文献 21

[1]	NOVOSELOV K S,GEIM A K, MOROZOU S V,et al. Two-dimensional gas of massless Dirac fermions in grapheme[J]. Nature,2005,438:197-200.
[2]	ANDREI E Y,LI G,DU X. Electronic properties of graphene:a perspective from scanning tunneling microscopy and magneto transport[J]. Reports on Progress in Physics,2012,75:51-56.
[3]	SCHEDIN F,GEIM A K,MOROZOV S V,et al. Detection of individual gas molecules adsorbed on graphene[J]. Nat. Mater.,2007,6:652-655.
[4]	MAYOROV A S,GORBACHEV R V,MOROZOV S V,et al. Micrometer-scale ballistic transport in encapsulated graphene at room temperature[J]. Nano Lett.,2011,11:2396-2399.
[5]	NAIR R R,BLAKE P,GRIGORENKO A N,et al. Fine structure constant defines visual transparency of graphene[J]. Science,2008,320:1308.
[6]	DU X,SKACHKO I,BARKER A,et al. Approaching ballistic transport in suspended graphene[J]. Nat. Nanotechnol.,2008,3:491-495.
[7]	BALANDIN A A,GHOSH S,BAO W,et al. Superior thermal conductivity of single-layer graphene[J]. Nano Lett.,2008,8:902-907.
[8]	LI X,CAI W, AN J, et al. Large-area synthesis of high-quality and uniform graphene films on copper foils[J]. Science,2009,324:1312-1314.
[9]	AJAYAN P M,YAKOBSON B L. Graphene:pushing the boundaries[J]. Nature Materials,2011,10:415-417.
[10]	LI X S,MAGNUSON C W,VENUGOPAL A,et al. Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper[J]. Journal of the American Chemical Society,2011,133:2816-2819.
[11]	HSIEH Y P,CHU Y H,TSAI H G,et al. Reducing the graphene grain density in three steps[J]. Nanotechnology,2016,27(10):105602.
[12]	VLASSIOUK I,REGMI M,FULVIO P,et al. Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene[J]. ACS Nano,2011,5(7):6069-6076.
[13]	ZHANG W,WU P,LI Z,et al. First-principles thermodynamics of graphene growth on Cu surfaces[J]. The Journal of Physical Chemistry C,2011,115(36):17782-17787.
[14]	MEHDIPOUR H, OSTRIKOV K K,Kinetics of low-pressure,low-temperature graphene growth:toward single-layer,single-crystalline structure[J]. ACS Nano,2012,6(11):10276-10286.
[15]	ZHANG Y,LI Z,KIM P, et al. Anisotropic hydrogen etching of chemical vapor deposited graphene[J]. ACS Nano,2011,6:126-132.
[16]	王鸿. 单晶石墨烯的化学气相沉积法制备、氢气刻蚀与同质外延研究[D].合肥:中国科学技术大学,2013. WANG H. Chemical vapor deposition synthesis,hydrogen etching and homoepitaxial growth of single-crystal graphene[D]. Hefei:University of Science and Technology of China,2013.
[17]	LI X,MAGNUSON C W,VENUGOPAL A,et al. Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper[J]. Journal of the American Chemical Society,2011,133(9):2816-2819.
[18]	LIN Y C,JIN C, LEE J C, et al. Clean transfer of graphene for isolation and suspension[J]. ACS Nano,2011,5(3):2362-2368.
[19]	吴娟霞,徐华,张锦. 拉曼光谱在石墨烯结构表征中的应用[J]. 化学学报,2014,72(3):301-318. WU J X,XU H,ZHANG J. Raman spectroscopy of graphene[J]. Acta Chimica Sinica,2014,72(3):301-318.
[20]	AHLBERG P,JOHANSSON F O L,ZHANG Z B,et al. Defect formation in graphene during low-energy ion bombardment[J]. Apl. Materials,2016,4(4):4598.
[21]	CANvADO L G,JORIO A,MARTINS FERREIRA E H,et al.Quantifying defects in graphene via Raman spectroscopy at different excitation energies[J]. Nano Lett.,2011,11(8):3190-3196.

不同降温方式对单晶石墨烯氢气刻蚀的改善

Reducing hydrogen etching of graphene by using different cooling method

PDF (PC)

可视化

摘要/Abstract

引用本文

使用本文

参考文献 21

相关文章 15

编辑推荐

Metrics

本文评价

[1]	杨欣, 王文, 徐凯, 马凡华. 高压氢气加注过程中温度特征仿真分析[J]. 化工学报, 2023, 74(S1): 280-286.
[2]	黄琮琪, 吴一梅, 陈建业, 邵双全. 碱性电解水制氢装置热管理系统仿真研究[J]. 化工学报, 2023, 74(S1): 320-328.
[3]	陆俊凤, 孙怀宇, 王艳磊, 何宏艳. 离子液体界面极化及其调控氢键性质的分子机理[J]. 化工学报, 2023, 74(9): 3665-3680.
[4]	米泽豪, 花儿. 基于DFT和COSMO-RS理论研究多元胺型离子液体吸收SO₂气体[J]. 化工学报, 2023, 74(9): 3681-3696.
[5]	李艺彤, 郭航, 陈浩, 叶芳. 催化剂非均匀分布的质子交换膜燃料电池操作条件研究[J]. 化工学报, 2023, 74(9): 3831-3840.
[6]	程业品, 胡达清, 徐奕莎, 刘华彦, 卢晗锋, 崔国凯. 离子液体基低共熔溶剂在转化CO₂中的应用[J]. 化工学报, 2023, 74(9): 3640-3653.
[7]	陈杰, 林永胜, 肖恺, 杨臣, 邱挺. 胆碱基碱性离子液体催化合成仲丁醇性能研究[J]. 化工学报, 2023, 74(9): 3716-3730.
[8]	杨学金, 杨金涛, 宁平, 王访, 宋晓双, 贾丽娟, 冯嘉予. 剧毒气体PH₃的干法净化技术研究进展[J]. 化工学报, 2023, 74(9): 3742-3755.
[9]	曹跃, 余冲, 李智, 杨明磊. 工业数据驱动的加氢裂化装置多工况切换过渡状态检测[J]. 化工学报, 2023, 74(9): 3841-3854.
[10]	杨绍旗, 赵淑蘅, 陈伦刚, 王晨光, 胡建军, 周清, 马隆龙. Raney镍-质子型离子液体体系催化木质素平台分子加氢脱氧制备烷烃[J]. 化工学报, 2023, 74(9): 3697-3707.
[11]	吴雷, 刘姣, 李长聪, 周军, 叶干, 刘田田, 朱瑞玉, 张秋利, 宋永辉. 低阶粉煤催化微波热解制备含碳纳米管的高附加值改性兰炭末[J]. 化工学报, 2023, 74(9): 3956-3967.
[12]	李科, 文键, 忻碧平. 耦合蒸气冷却屏的真空多层绝热结构对液氢储罐自增压过程的影响机制研究[J]. 化工学报, 2023, 74(9): 3786-3796.
[13]	范孝雄, 郝丽芳, 范垂钢, 李松庚. LaMnO₃/生物炭催化剂低温NH₃-SCR催化脱硝性能研究[J]. 化工学报, 2023, 74(9): 3821-3830.
[14]	杨菲菲, 赵世熙, 周维, 倪中海. Sn掺杂的In₂O₃催化CO₂选择性加氢制甲醇[J]. 化工学报, 2023, 74(8): 3366-3374.
[15]	李凯旋, 谭伟, 张曼玉, 徐志豪, 王旭裕, 纪红兵. 富含零价钴活性位点的钴氮碳/活性炭设计及甲醛催化氧化应用研究[J]. 化工学报, 2023, 74(8): 3342-3352.