金属基极紫外光刻胶

doi:10.11949/0438-1157.20220583

摘要/Abstract

摘要：

由于具有光源波长短（13.5 nm）、图案化分辨率高等优点，极紫外（extreme ultraviolet， EUV）光刻技术被认为是突破5 nm甚至是3 nm半导体芯片制程节点的关键技术，与之相对应的EUV光刻胶研发广受关注。但传统的基于聚合物体系的化学放大光刻胶（chemical amplified resist， CAR）因尺寸过大、对EUV吸收低，限制了其在EUV光刻技术的应用进程。部分含有d轨道电子的金属元素具有高的EUV吸收截面，在光刻胶分子中引入这些金属元素可以有效提高对EUV的灵敏度。通过分子设计制备尺寸小、EUV吸收高的金属基光刻胶材料是解决EUV光刻胶服役性能问题的有效途径，已得到了广泛的研究。本文按金属氧簇（MOCs）、金属氧化物纳米粒子（NP）、金属-有机小分子（MORE）进行分类，对目前国内外的EUV光刻胶研究进展进行总结，并对EUV光刻胶未来所面临的机遇和挑战进行了展望。

关键词: 极紫外光, 光刻胶, 集成电路, 光敏性, 抗刻蚀性

Abstract:

Due to advantages of short exposure wavelength (13.5 nm) and high patterning resolution, extreme ultraviolet (EUV) lithography is the state-of-the-art technology to break through the 3 nm process node in integrated circuit. The corresponding EUV photoresist has drawn considerable attention. However, conventional chemically amplified resists (CAR) based on polymer systems are large in size and show low EUV sensitivity, which greatly limit their application process in EUV lithography. The introduction of metals containing d-orbital electrons into the photoresist molecules can effectively enhance the sensitivity to EUV light. Therefore, it is one of the effective ways to improve the EUV service performance by developing metal-based photoresists of small size and high EUV absorption through molecular design. This paper summarizes the current research progress of metal-based EUV photoresist, including metal-oxo clusters (MOCs), nanoparticles (NPs) and molecular organometallic resists for EUV (MORE), and prospect the further development and challenge of EUV photoresist.

Key words: extreme ultraviolet, photoresist, integrated circuit, photosensitivity, resistance

中图分类号:

TQ 028.8

陈昊, 陈鹏忠, 彭孝军. 金属基极紫外光刻胶[J]. 化工学报, 2022, 73(8): 3307-3325.

Hao CHEN, Pengzhong CHEN, Xiaojun PENG. Metal-based extreme ultraviolet photoresist[J]. CIESC Journal, 2022, 73(8): 3307-3325.

图/表 22

图1 光刻工艺示意图

Fig.1 Schematic illustration of the photolithography process

图2 重氮萘醌/酚醛树脂体系光刻胶示意图

Fig.2 Schematic illustration of DNQ/novolac photoresist system

图3 PBOCST光刻胶实现化学放大的原理

Fig.3 The principle of PBOCST chemical amplification photoresist

图4 193 nm光刻胶和193 nm浸没式光刻胶中PAG和聚合物的化学结构

Fig.4 The chemical structure of PAG and polymer in 193 nm and 193 nm immersion photoresist

图5 光刻特征尺寸与光源波长的发展[21]（R表示分辨率，k为工艺参数）

Fig.5 The development of lithography critical dimension and light source wavelength[21]

图6 ASML公司的193 nm浸没式光刻机和EUV光刻机[22]

Fig.6 193 nm immersion and EUV lithography machine from ASML[22]

图7 显影时较厚的膜导致图案因显影液的表面张力而倒塌

Fig.7 Thicker films cause the pattern to collapse due to the surface tension

图8 对EUV光的吸收横截面积[45]

Fig.8 Absorption cross-sectional area for EUV light[45]

图9 几种常见的锡-氧团簇[62-64]

Fig.9 Several common tin-oxygen clusters[62-64]

图10 光刻胶膜从A→B→C的转变示意图[36]

Fig.10 Schematic illustration of the transition of photoresist film from A→B→C[36]

表1 五种环境下Keggin-NaSn13光刻胶的D0和D100值

Table1 D0 and D100 values of Keggin-NaSn13 photoresist in five environments

Environment	D₀ × 10¹⁶ / (ph/cm²)	D₁₀₀× 10¹⁶ / (ph/cm²)	D₀/s	D₁₀₀/s	γ
UHV	1.4	2.7	550	1100	3.3
$P O 2$ = 1 mbar	1.2	2.2	470	870	3.8
$P D 2 O$ = 1 mbar	2.1	4.0	850	1600	3.7
P_MeOH = 1 mbar	2.5	4.1	980	1700	4.4
$P N 2$ = 1 mbar	2.0	3.4	810	1400	4.4

表1 五种环境下Keggin-NaSn13光刻胶的D0和D100值

Table1 D0 and D100 values of Keggin-NaSn13 photoresist in five environments

Environment	D₀ × 10¹⁶ / (ph/cm²)	D₁₀₀× 10¹⁶ / (ph/cm²)	D₀/s	D₁₀₀/s	γ
UHV	1.4	2.7	550	1100	3.3
$P O 2$ = 1 mbar	1.2	2.2	470	870	3.8
$P D 2 O$ = 1 mbar	2.1	4.0	850	1600	3.7
P_MeOH = 1 mbar	2.5	4.1	980	1700	4.4
$P N 2$ = 1 mbar	2.0	3.4	810	1400	4.4

图11 Keggin-NaSn13发生光刻反应的机理示意图[65]

Fig.11 Schematic illustration of photolithographic mechanism of Keggin-NaSn13[65]

图12 三种锡-氧团簇的化学结构[(a)~(c)]；三种锡-氧团簇的敏感度曲线(d)[66]

Fig.12 Chemical structures of three tin-oxygen cluster [(a)—(c)]; their sensitivity curvers (d)[66]

图13 锡-氧团簇吸收CO2并生成碳酸盐的示意图[67]

Fig.13 Schematic illustration of tin-oxygen clusters absorbing CO2 and forming carbonates[67]

图14 TOC-22(a)、TOC-37(b)、TOC-38(c)、TOC-39(d)的结构示意图和堆积方式示意图[68]

Fig.14 Schematic illustration of the structure and packing models of TOC-22(a), TOC-37(b), TOC-38(c), TOC-39(d)[68]

图15 ZrMC-CB发生光刻反应的机理示意图[73]

Fig.15 Schematic illustration of lithographic reaction mechanism of ZrMC-CB[73]

图16 不同配体的含锌团簇的结构示意图[74]

Fig.16 Schematic illustration of chemical structure of zinc-based clusters with several ligands[74]

图17 Zn(TFMA)发生光刻反应的机理示意图[74]

Fig.17 Schematic illustration of lithographic reaction mechanism of Zn(TFMA) [74]

图18 金属氧化物纳米粒子光刻胶发生光刻反应的机理示意图[81]

Fig.18 Schematic illustration of lithographic mechanism of metal oxide nanoparticle photoresist[81]

图19 MAPDST-co-ADSM的合成步骤示意图[86]

Fig.19 Schematic illustration of the synthesis steps of MAPDST-co-ADSM[86]

图20 [R3Sb(O2CR′)2]光刻实验的结果[88]

Fig.20 The lithographic effect of [R3Sb(O2CR′)2] [88]

图21 [R3Sb(O2CR′)2] 发生光刻反应的机理示意图[90]

Fig.21 Schematic illustration of lithographic mechanism of [R3Sb(O2CR′)2][90]

参考文献 44

45	Fallica R, Haitjema J, Wu L J, et al. Absorption coefficient of metal-containing photoresists in the extreme ultraviolet[J]. Nanolithography, MEMS, and MOEMS, 2018, 17(2): 1.
46	Xu H, Sakai K, Kasahara K, et al. Metal–organic framework-inspired metal-containing clusters for high-resolution patterning[J]. Chemistry of Materials, 2018, 30(12): 4124-4133.
47	Zhang Y, Haitjema J, Baljozovic M, et al. Dual-tone application of a tin-oxo cage photoresist under E-beam and EUV exposure[J]. Journal of Photopolymer Science and Technology, 2018, 31(2): 249-255.
48	Bae W J, Trikeriotis M, Sha J, et al. High refractive index and high transparency HfO₂ nanocomposites for next generation lithography[J]. Journal of Materials Chemistry, 2010, 20(25): 5186.
49	Tiwale N, Subramanian A, Kisslinger K, et al. Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists[J]. Journal of Materials Chemistry C, 2019, 7(29): 8803-8812.
50	Grzeskowiak S, Narasimhan A, Murphy M, et al. Reactivity of metal-oxalate EUV resists as a function of the central metal[C]//SPIE Advanced Lithography. Proc SPIE 10146, Advances in Patterning Materials and Processes XXXIV, San Jose, California, USA. 2017, 10146: 14-24
51	Fallica R, Watts B, Rösner B, et al. Changes in the near edge X-ray absorption fine structure of hybrid organic–inorganic resists upon exposure[J]. Nanotechnology, 2018, 29(36): 36LT03.
52	Sadegh N, van der Geest M, Haitjema J, et al. XUV induced bleaching of a tin oxo cage photoresist studied by high harmonic absorption spectroscopy[J]. Journal of Photopolymer Science and Technology, 2020, 33(2): 145-151.
53	Frederick R T, Saha S, Diulus J T, et al. Thermal and radiation chemistry of butyltin oxo hydroxo: a model inorganic photoresist[J]. Microelectronic Engineering, 2019, 205: 26-31.
54	Haitjema J, Wu L J, Giuliani A, et al. Photo-induced fragmentation of a tin-oxo cage compound[J]. Journal of Photopolymer Science and Technology, 2018, 31(2): 243-247.
55	van Lokeren L, Willem R, van der Beek D, et al. Probing the anions mediated associative behavior of tin-12 oxo-macrocations by pulsed field gradient NMR spectroscopy[J]. The Journal of Physical Chemistry C, 2010, 114(39): 16087-16091.
56	Ribot F, Escax V, Martins J C, et al. Probing ionic association on metal oxide clusters by pulsed field gradient NMR spectroscopy: the example of Sn12-oxo clusters[J]. Chemistry - A European Journal, 2004, 10(7): 1747-1751.
57	Closser K D, Ogletree D F, Naulleau P, et al. The importance of inner-shell electronic structure for enhancing the EUV absorption of photoresist materials[J]. The Journal of Chemical Physics, 2017, 146(16): 164106.
58	Li G Y, Fu M C, Zheng Y, et al. TiO₂ microring resonators with high Q and compact footprint fabricated by a bottom-up method[J]. Optics Letters, 2020, 45(18): 5012-5015.
59	Woo J C, Joo Y H, Kim C I. Surface etching of TiO₂Thin films using high density Cl₂/Ar plasma[J]. Transactions on Electrical and Electronic Materials, 2015, 16(6): 346-350.
60	Shkondin E, Takayama O, Lindhard J M, et al. Fabrication of high aspect ratio TiO₂ and Al₂O₃ nanogratings by atomic layer deposition[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2016, 34(3): 031605.
61	Cardineau B, Del Re R, Marnell M, et al. Photolithographic properties of tin-oxo clusters using extreme ultraviolet light (13.5 nm)[J]. Microelectronic Engineering, 2014, 127: 44-50.
62	Haitjema J, Zhang Y, Vockenhuber M, et al. Extreme ultraviolet patterning of tin-oxo cages[J]. Nanolithography, MEMS, and MOEMS, 2017, 16(3): 1.
63	Sharps M C, Marsh D A, Zakharov L N, et al. Implications of crystal structure on organotin carboxylate photoresists[J]. Crystal Research and Technology, 2017, 52(10): 1700081.
64	Frederick R T, Diulus J T, Hutchison D C, et al. Effect of oxygen on thermal and radiation-induced chemistries in a model organotin photoresist[J]. ACS Applied Materials & Interfaces, 2019, 11(4): 4514-4522.
65	Diulus J T, Frederick R T, Hutchison D C, et al. Effect of ambient conditions on radiation-induced chemistries of a nanocluster organotin photoresist for next-generation EUV nanolithography[J]. ACS Applied Nano Materials, 2020, 3(3): 2266-2277.
66	Sharps M, Frederick R T, Javitz M L, et al. Organotin carboxylate reagents for nanopatterning: chemical transformations during direct-write electron beam processes[J]. Chemistry of Materials, 2019, 31(13): 4840-4850.
67	Kenane N, Keszler D A. High-resolution lithographic patterning with organotin films: role of CO₂ in differential dissolution rates[J]. ACS Applied Materials & Interfaces, 2021, 13(16): 18974-18983.
68	Wang D, Yi X F, Zhang L. Non-alkyl tin-oxo clusters as new-type patterning materials for nanolithography[J]. Science China Chemistry, 2022, 65(1): 114-119.
69	Rösner B, Fallica R, Johnson M, et al. Nanolithographic top-down patterning of polyoxovanadate-based nanostructures with switchable electrical resistivity[J]. ChemNanoMat, 2020, 6(11): 1620-1624.
70	Sharma S K, Kumar R, Chauhan M, et al. All-new nickel-based metal core organic cluster (MCOC) resist for N₇ ⁺ node patterning[C]//SPIE Advanced Lithography. Proc SPIE 11326, Advances in Patterning Materials and Processes ⅩⅩⅩⅦ. San Jose, California, USA. 2020, 11326: 1132604.
71	Rathore A, Pollentier I, Cipriani M, et al. Extreme ultraviolet-printability and mechanistic studies of engineered hydrogen silsesquioxane photoresist systems[J]. ACS Applied Polymer Materials, 2021, 3(4): 1964-1972.
72	Pollentier I, Vesters Y, Jiang J, et al. Unraveling the role of secondary electrons upon their interaction with photoresist during EUV exposure[C]//SPIE Photomask Technology and EUV Lithography. Proc SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, Monterey, California, USA. 2017, 10450: 65-71.
73	Wu L J, Hilbers M F, Lugier O, et al. Fluorescent labeling to investigate nanopatterning processes in extreme ultraviolet lithography[J]. ACS Applied Materials & Interfaces, 2021, 13(43): 51790-51798.
74	Thakur N, Vockenhuber M, Ekinci Y, et al. Fluorine-rich zinc oxoclusters as extreme ultraviolet photoresists: chemical reactions and lithography performance[J]. ACS Materials Au, 2022, 2(3): 343-355.
75	Rohdenburg M, Thakur N, Cartaya R, et al. Role of low-energy electrons in the solubility switch of Zn-based oxocluster photoresist for extreme ultraviolet lithography[J]. Physical Chemistry Chemical Physics: PCCP, 2021, 23(31): 16646-16657.
76	Wu L J, Tiekink M, Giuliani A, et al. Tuning photoionization mechanisms of molecular hybrid materials for EUV lithography applications[J]. Journal of Materials Chemistry C, 2019, 7(1): 33-37.
77	Frederick R T, Amador J M, Goberna-Ferrón S, et al. Mechanistic study of HafSOx extreme ultraviolet inorganic resists[J]. The Journal of Physical Chemistry C, 2018, 122(28): 16100-16112.
78	Kosma V, Kasahara K, Xu H, et al. Elucidating the patterning mechanism of zirconium-based hybrid photoresists[J]. Journal of Micro/Nanolithography, MEMS, and MOEMS, 2017, 16: 041007.
79	Trikeriotis M, Bae W J, Schwartz E, et al. Development of an inorganic photoresist for DUV, EUV, and electron beam imaging[C]//SPIE Advanced Lithography. Proc SPIE 7639, Advances in Resist Materials and Processing Technology ⅩⅩⅦ, San Jose, California, USA. 2010, 7639: 120-129.
80	Trikeriotis M, Krysak M, Chung Y S, et al. A new inorganic EUV resist with high-etch resistance[C]//SPIE Proceedings, Extreme Ultraviolet (EUV) Lithography Ⅲ. San Jose, California. 2012: 83220U.
81	Li L, Chakrabarty S, Spyrou K, et al. Studying the mechanism of hybrid nanoparticle photoresists: effect of particle size on photopatterning[J]. Chemistry of Materials, 2015, 27(14): 5027-5031.
82	Mattson E C, Cabrera Y, Rupich S M, et al. Chemical modification mechanisms in hybrid hafnium oxo-methacrylate nanocluster photoresists for extreme ultraviolet patterning[J]. Chemistry of Materials, 2018, 30(17): 6192-6206.
83	Yang K, Xu H, Sakai K, et al. Radical sensitive zinc-based nanoparticle EUV photoresists[C]//SPIE Advanced Lithography. Proc SPIE 10960, Advances in Patterning Materials and Processes ⅩⅩⅩⅥ, San Jose, California, USA. 2019, 10960: 205-211.
84	李冰, 马洁, 刁翠梅, 等. 光刻胶材料发展状况及下一代光刻技术对图形化材料的挑战[J]. 新材料产业, 2018(12): 43-47.
	Li B, Ma J, Diao C M, et al. The development of photoresist materials and the challenge of next generation lithography technology to patterned materials [J]. Advanced Materials Industry, 2018(12): 43-47.
85	Belmonte G K, Cendron S W, Guruprasad Reddy P, et al. Mechanistic insights of Sn-based non-chemically-amplified resists under EUV irradiation[J]. Applied Surface Science, 2020, 533: 146553.
86	Peter J, Moinuddin M G, Ghosh S, et al. Organotin in nonchemically amplified polymeric hybrid resist imparts better resolution with sensitivity for next-generation lithography[J]. ACS Applied Polymer Materials, 2020, 2(5): 1790-1799.
87	Enomoto S, Yoshino T, Machida K, et al. Effects of an organotin compound on radiation-induced reactions of extreme-ultraviolet resists utilizing polarity change and radical crosslinking[J]. Japanese Journal of Applied Physics, 2019, 58(1): 016504.
88	Passarelli J, Murphy M, del Re R, et al. High-sensitivity molecular organometallic resist for EUV (MORE)[C]//Advances in Patterning Materials and Processes ⅩⅩⅫ, SPIE Proceedings. San Jose, California, USA. 2015: 94250T.
89	Hasan S, Murphy M, Weires M, et al. Oligomers of MORE: molecular organometallic resists for EUV[C]//SPIE Advanced Lithography. Proc SPIE 10960, Advances in Patterning Materials and Processes ⅩⅩⅩⅥ, San Jose, California, USA. 2019, 10960: 205-213.
90	Murphy M, Sitterly J, Grzeskowiak S, et al. Mechanisms of photodecomposition of metal-containing EUV photoresists: isotopic labelling studies[C]//SPIE Advanced Lithography. Proc SPIE 10586, Advances in Patterning Materials and Processes ⅩⅩⅩⅤ, San Jose, California, USA. 2018, 10586: 16-25.
91	Yin L, Wang H C, Reagan B A, et al. 6.7-nm emission from Gd and Tb plasmas over a broad range of irradiation parameters using a single laser[J]. Physical Review Applied, 2016, 6(3): 034009.
92	Uzoma P C, Shabbir S, Hu H, et al. Multilayer reflective coatings for BEUV lithography: a review[J]. Nanomaterials (Basel, Switzerland), 2021, 11(11): 2782.
93	Hong S, Kim J S, Lee J U, et al. Evaluation of metal absorber materials for beyond extreme ultraviolet lithography[J]. Journal of Nanoscience and Nanotechnology, 2015, 15(11): 8652-8655.
94	Xu Q, Tian H, Zhao Y P, et al. Effect of time delay on laser-triggered discharge plasma for a beyond EUV source[J]. Symmetry, 2019, 11(5): 658.
95	Yoshida K, Fujioka S, Higashiguchi T, et al. Beyond extreme ultra violet (BEUV) radiation from spherically symmetrical high-Z plasmas[J]. Journal of Physics: Conference Series, 2016, 688: 012046.
96	Kilbane D, O'Sullivan G. Extreme ultraviolet emission spectra of Gd and Tb ions[J]. Journal of Applied Physics, 2010, 108(10): 104905.
1	Pimpin A, Srituravanich W. Review on micro- and nanolithography techniques and their applications[J]. Engineering Journal, 2012, 16(1): 37-56.
2	Ghosh S, Pradeep C P, Sharma S K, et al. Recent advances in non-chemically amplified photoresists for next generation IC technology[J]. RSC Advances, 2016, 6(78): 74462-74481.
3	Reichmanis E, Thompson L F. Polymer materials for microlithography[J]. Annual Review of Materials Science, 1987, 17: 235-271.
4	Manouras T, Argitis P. High sensitivity resists for EUV lithography: a review of material design strategies and performance results[J]. Nanomaterials (Basel, Switzerland), 2020, 10(8): 1593.
5	Li L, Liu X, Pal S, et al. Extreme ultraviolet resist materials for sub-7 nm patterning[J]. Chemical Society Reviews, 2017, 46(16): 4855-4866.
6	Reichmanis E, Thompson L F. Polymer materials for microlithography[J]. Chemical Review, 1989, 89(6): 1273-1289.
7	顾雪松, 李小欧, 刘亚栋, 等. g-线/i-线光刻胶研究进展[J]. 应用化学, 2021, 38(9): 1091-1104.
	Gu X S, Li X O, Liu Y D, et al. Research progress on g-line and i-line photoresists[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1091-1104.
8	Bratton D, Ayothi R, Deng H, et al. Diazonaphthoquinone molecular glass photoresists: patterning without chemical amplification[J]. Chemistry of Materials, 2007, 19(15): 3780-3786.
9	Khanna D N, Durham D L, Seyedi F, et al. Novolak resins with high thermal-stability, high-resolution, improved photospeed and etch characteristics for advanced photoresist applications[J]. Polymer Engineering & Science, 1992, 32(20): 1500-1508.
10	Ito H, Willson C G. Chemical amplification in the design of dry developing resist materials[J]. Polymer Engineering & Science, 1983, 23(18): 1012-1018.
11	Ito H. Chemical amplification resists: inception, implementation in device manufacture, and new developments[J]. Journal of Polymer Science Part A: Polymer Chemistry, 2003, 41(24): 3863-3870.
12	Reichmanis E, Houlihan F M, Nalamasu O, et al. Chemical amplification mechanisms for microlithography[J]. Chemistry of Materials, 1991, 3(3): 394-407.
13	Lee S M, Frechet J M J. Design of new positive-tone photoresists based on the acid-catalyzed hydrolysis of phenylmethanediol diesters[J]. Chemistry of Materials, 1994, 6(10): 1830-1837.
14	Ito H. Chemical amplification resists: history and development within IBM[J]. IBM Journal of Research and Development, 2000, 44(1.2): 119-130.
15	Allen R D, Sooriyakumaran R, Opitz J, et al. Progress in 193 nm positive resists[J]. Journal of Photopolymer Science and Technology, 1996, 9(3): 465-474.
16	Nozaki K. Material innovations for 193-nm resists[J]. Journal of Photopolymer Science and Technology, 2010, 23(6): 795-801.
17	Sanders D P. Advances in patterning materials for 193 nm immersion lithography[J]. Chemical Reviews, 2010, 110(1): 321-360.
18	López-Gejo J, Kunjappu J T, Zhou J, et al. Polycycloalkanes as potential third-generation immersion fluids for photolithography at 193 nm [J]. Chemistry of Materials, 2007, 19(15): 3641-3647.
19	Matsumoto K, Costner E A, Nishimura I, et al. High index resist for 193 nm immersion lithography[J]. Macromolecules, 2008, 41(15): 5674-5680.
20	Seisyan R P. Nanolithography in microelectronics: a review[J]. Technical Physics, 2011, 56(8): 1061-1073.
21	朋小康, 黄兴文, 刘荣涛, 等. 光刻胶成膜剂:发展与未来[J]. 应用化学, 2021, 38(9): 1079-1090.
	Peng X K, Huang X W, Liu R T, et al. Photoresist film-forming agent: development and future[J]. Chinese Journal of Applied Chemistry, 2021, 38(9): 1079-1090.
22	Fu N, Liu Y X, Ma X L, et al. EUV lithography: state-of-the-art review[J]. Journal of Microelectronic Manufacturing, 2019, 2(2): 1-6.
23	Singh V, Satyanarayana V S V, Sharma S K, et al. Towards novel non-chemically amplified (n-CARS) negative resists for electron beam lithography applications[J]. Journal of Materials Chemistry C, 2014, 2(12): 2118.
24	Satyanarayana V S V, Kessler F, Singh V, et al. Radiation-sensitive novel polymeric resist materials: iterative synthesis and their EUV fragmentation studies[J]. ACS Applied Materials & Interfaces, 2014, 6(6): 4223-4232.
25	Vieu C, Carcenac F, Pépin A, et al. Electron beam lithography: resolution limits and applications[J]. Applied Surface Science, 2000, 164(1/2/3/4): 111-117.
26	Irie S, Endo M, Sasago M, et al. Study of transmittance of polymers and influence of photoacid generator on resist transmittance at extreme ultraviolet wavelength[J]. Japanese Journal of Applied Physics, 2002, 41( 9): 5864-5867.
27	Kozawa T, Tagawa S. Radiation chemistry in chemically amplified resists[J]. Japanese Journal of Applied Physics, 2010, 49: 030001.
28	Rathore A, Pollentier I, Singh H, et al. Effect of molecular weight on the EUV-printability of main chain scission type polymers[J]. Journal of Materials Chemistry C, 2020, 8(17): 5958-5966.
29	Reddy P G, Pal S P, Kumar P, et al. Polyarylenesulfonium salt as a novel and versatile nonchemically amplified negative tone photoresist for high-resolution extreme ultraviolet lithography applications[J]. ACS Applied Materials & Interfaces, 2017, 9(1): 17-21.
30	Kostko O, Xu B, Ahmed M, et al. Fundamental understanding of chemical processes in extreme ultraviolet resist materials[J]. The Journal of Chemical Physics, 2018, 149(15): 154305.
31	Thakur N, Bliem R, Mochi I, et al. Mixed-ligand zinc-oxoclusters: efficient chemistry for high resolution nanolithography[J]. Journal of Materials Chemistry C, 2020, 8(41): 14499-14506.
32	Nishikubo T, Kudo H. Recent development in molecular resists for extreme ultraviolet lithography[J]. Journal of Photopolymer Science and Technology, 2011, 24(1): 9-18.
33	Bhattarai S, Neureuther A R, Naulleau P P. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography[J]. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2017, 35(6): 061602.
34	Wood Ii O R. EUVL: challenges to manufacturing insertion[J]. Journal of Photopolymer Science and Technology, 2017, 30(5): 599-604.
35	Sanchez M I, Wallraff G M, Megiddo N, et al. An analysis of EUV resist stochastic printing failures[C]//SPIE Photomask Technology + EUV Lithography. Proc SPIE 11147, International Conference on Extreme Ultraviolet Lithography 2019, Monterey, California, USA. 2019, 11147: 125-140.
36	Bespalov I, Zhang Y, Haitjema J, et al. Key role of very low energy electrons in tin-based molecular resists for extreme ultraviolet nanolithography[J]. ACS Applied Materials & Interfaces, 2020, 12(8): 9881-9889.
37	Luo C Y, Xu C C, Lv L, et al. Review of recent advances in inorganic photoresists[J]. RSC Advances, 2020, 10(14): 8385-8395.
97	Churilov S S, Kildiyarova R R, Ryabtsev A N, et al. EUV spectra of Gd and Tb ions excited in laser-produced and vacuum spark plasmas[J]. Physica Scripta, 2009, 80(4): 045303.
98	Wang J W, Wang X B, Zuo D L, et al. Characteristics of discharge and beyond extreme ultraviolet spectra of laser induced discharge gadolinium plasma[J]. Optics & Laser Technology, 2021, 138: 106904.
99	Alnaimi R, Wang H X, Zhang Z, et al. Design calculations and characterization of C/Cr multilayer mirrors in the 6 nm BEUV[J]. Optik, 2016, 127(2): 588-592.
100	Makhotkin I A, Zoethout E, Louis E, et al. Wavelength selection for multilayer coatings for the lithography generation beyond EUVL[C]//SPIE Advanced Lithography. Proc SPIE 8322, Extreme Ultraviolet (EUV) Lithography Ⅲ, San Jose, California, USA. 2012, 8322: 337-341.
101	Oyama T G, Oshima A, Washio M, et al. Method of predicting resist sensitivity for 6.x nm extreme ultraviolet lithography[J]. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 2013, 31(4): 041604.
102	Oyama T G, Oshima A, Washio M, et al. Evaluation of resist sensitivity in extreme ultraviolet/soft X-ray region for next-generation lithography[J]. AIP Advances, 2011, 1(4): 042153.
103	Anderson C, Ashworth D, Baclea-An L M, et al. The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm[C]//SPIE Advanced Lithography. Proc SPIE 8322, Extreme Ultraviolet (EUV) Lithography Ⅲ, San Jose, California, USA. 2012, 8322: 330-336
104	Mojarad N, Vockenhuber M, Wang L, et al. Patterning at 6.5 nm wavelength using interference lithography[C]//Extreme Ultraviolet (EUV) Lithography Ⅳ, SPIE Proceedings. San Jose, California, USA. 2013: 867924.
38	Wang C W, Chang C Y, Ku Y. Photobase generator and photo decomposable quencher for high-resolution photoresist applications[C] //SPIE Advanced Lithography. Proc SPIE 7639, Advances in Resist Materials and Processing Technology ⅩⅩⅦ. San Jose, California, USA. 2010, 7639: 279-293.
39	Yildirim O, Buitrago E, Hoefnagels R, et al. Improvements in resist performance towards EUV HVM[C]//SPIE Proceedings, Extreme Ultraviolet (EUV) Lithography Ⅷ. San Jose, California, USA. 2017: 101430Q.
40	Peng X M, Wang Y F, Xu J, et al. Molecular Glass photoresists with high resolution, low ler, and high sensitivity for EUV lithography[J]. Macromolecular Materials and Engineering, 2018, 303(6): 1700654.
41	Chen J P, Hao Q S, Wang S Q, et al. Molecular glass resists based on 9, 9'-spirobifluorene derivatives: pendant effect and comprehensive evaluation in extreme ultraviolet lithography[J]. ACS Applied Polymer Materials, 2019, 1(3): 526-534.
42	de Simone D, Vesters Y, Vandenberghe G. Photoresists in extreme ultraviolet lithography (EUVL)[J]. Advanced Optical Technologies, 2017, 6(3/4): 163-172.
43	Wu B Q, Kumar A. Extreme ultraviolet lithography: a review[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2007, 25(6): 1743.
44	Solak H H, He D, Li W, et al. Exposure of 38 nm period grating patterns with extreme ultraviolet interferometric lithography[J]. Applied Physics Letters, 1999, 75(15): 2328-2330.

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